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Spin Filtering Ability of Patterned Graphene Nanoribbons

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F13%3A00212047" target="_blank" >RIV/68407700:21230/13:00212047 - isvavai.cz</a>

  • Result on the web

    <a href="http://www.nanocon.eu/files/proceedings/14/reports/1977.pdf" target="_blank" >http://www.nanocon.eu/files/proceedings/14/reports/1977.pdf</a>

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Spin Filtering Ability of Patterned Graphene Nanoribbons

  • Original language description

    The passivated zigzag graphene nanoribbons composed of 2 or 4 atoms wide basis (2-ZGNR or 4-ZGNR) produce strong spin-dependent behavior resulting in a large spin polarization effect. It is shown by analyzing the GNR transmissions calculated by Extended Hückel self-consistent field model (EH-SCF). Our results endorse that for the generation of spin-polarized currents, formation of spin-ordered edge-localized states along the zigzag edges is the key mechanism. We analyzed the influence of various point and planar defects as well as the influence of width and structural composition of GNRs and presented transmission, eigenstates, difference electron densities and electrostatic difference potentials of all respective structures. Since GNRs have long spin-correlation lengths and good ballistic transport characteristics they can be considered as a promising active material of spintronic devices without the need of ferromagnetic electrodes or other magnetic entities. The spin filtering structures could be prepared by the nanolithography of GNR or by the bottom-up approach in future.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

    <a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2013

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    5th International Conference NANOCON 2013 Conference Proceedings

  • ISBN

    978-80-87294-47-5

  • ISSN

  • e-ISSN

  • Number of pages

    5

  • Pages from-to

    113-117

  • Publisher name

    Technická universita Ostrava - Vysoká škola báňská

  • Place of publication

    Ostrava

  • Event location

    Brno

  • Event date

    Oct 16, 2013

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000352070900018