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The Study of Graphene Gas Sensor

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00209826" target="_blank" >RIV/68407700:21230/14:00209826 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.605.495" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/KEM.605.495</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.4028/www.scientific.net/KEM.605.495" target="_blank" >10.4028/www.scientific.net/KEM.605.495</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    The Study of Graphene Gas Sensor

  • Original language description

    The graphene is suitable for gas sensing applications for its two dimensional character which gives the best possible ratio between sensor surface and volume. The interaction between graphene surface and gas molecules can significantly change the graphene layer transport properties. Therefore graphene can serve as a sensitive layer in a gas sensor. This work is concentrated on the analysis of the conductivity of graphene layer exposed to different gases (NH3, CO2 etc.). Together with the electrical measurement on the interdigital graphene sensor a simulation based on quantum atomistic approach has been performed. We used ATK toolkit by Quantuwise based on density functional theory (DFT) models. The exchange-correlation potential is approximated withinthe generalized gradient approximation (GGA). The transport properties of the electrode-device-electrode geometry were calculated by means of non-equilibrium Green?s function formalism as implemented in ATK. Experimental conductivity chan

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP108%2F11%2F0894" target="_blank" >GAP108/11/0894: Growth and processing of graphene layers on silicon carbide</a><br>

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    IC-MAST - 3rd International Conference on Materials and Applications for Sensors and Transducers

  • ISBN

    9783038350514

  • ISSN

    1013-9826

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    495-498

  • Publisher name

    Transtech Publications

  • Place of publication

    Zürich

  • Event location

    Praha

  • Event date

    Sep 13, 2013

  • Type of event by nationality

    EUR - Evropská akce

  • UT code for WoS article

    000348035600122