Point defects in 4H-SiC epilayers introduced by neutron irradiation
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00217508" target="_blank" >RIV/68407700:21230/14:00217508 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1016/j.nimb.2013.09.051" target="_blank" >http://dx.doi.org/10.1016/j.nimb.2013.09.051</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.nimb.2013.09.051" target="_blank" >10.1016/j.nimb.2013.09.051</a>
Alternative languages
Result language
angličtina
Original language name
Point defects in 4H-SiC epilayers introduced by neutron irradiation
Original language description
The paper deals with electronic properties of radiation damage produced in 4H-SiC by neutron irradiation and its effect on electrical parameters of Junction Barrier Schottky (JBS) diodes.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Nuclear Instruments and Methods in Physics Research, Section B, Beam Interactions with Materials and Atoms
ISSN
0168-583X
e-ISSN
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Volume of the periodical
327
Issue of the periodical within the volume
1
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
4
Pages from-to
124-127
UT code for WoS article
000337016500024
EID of the result in the Scopus database
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