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Construction and technology of power semiconductor devices

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00218825" target="_blank" >RIV/68407700:21230/14:00218825 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1049/iet-cds.2014.0044" target="_blank" >http://dx.doi.org/10.1049/iet-cds.2014.0044</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1049/iet-cds.2014.0044" target="_blank" >10.1049/iet-cds.2014.0044</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Construction and technology of power semiconductor devices

  • Original language description

    Editorial paper gives short overview about present development in the field of power semiconductors and a brief introduction to papers selected in the Special Issue from papers presented at the ISPS'12 conference.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2014

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů