Planar pixel sensors for the ATLAS upgrade: beam tests results

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F14%3A00311942" target="_blank" >RIV/68407700:21230/14:00311942 - isvavai.cz</a>
Alternative codes found
RIV/68407700:21340/14:00311942
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Planar pixel sensors for the ATLAS upgrade: beam tests results
Original language description
The performance of planar silicon pixel sensors, in development for the ATLAS Insertable B-Layer and High Luminosity LHC (HL-LHC) upgrades, has been examined in a series of beam tests at the CERN SPS facilities since 2009. Salient results are reported on the key parameters, including the spatial resolution, the charge collection and the charge sharing between adjacent cells, for different bulk materials and sensor geometries. Measurements are presented for n+-in-n pixel sensors irradiated with a range of fluences and for p-type silicon sensors with various layouts from different vendors. All tested sensors were connected via bump-bonding to the ATLAS Pixel read-out chip. The tests reveal that both n-type and p-type planar sensors are able to collect significant charge even after the lifetime fluence expected at the HL-LHC.
Czech name
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Czech description
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Project
<a href="/en/project/TE01020069" target="_blank" >TE01020069: Advanced Detection Systems of Ionizing Radiation</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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