Simulation and Characterization of Ion Irradiated 4H-SiC JBS Diode
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00231115" target="_blank" >RIV/68407700:21230/15:00231115 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7208587" target="_blank" >http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=7208587</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/MIXDES.2015.7208587" target="_blank" >10.1109/MIXDES.2015.7208587</a>
Alternative languages
Result language
angličtina
Original language name
Simulation and Characterization of Ion Irradiated 4H-SiC JBS Diode
Original language description
The paper deals with simulation and characterization of 4H-SiC JBS diode irradiated by hydrogen and carbon ions.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
—
OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
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Continuities
R - Projekt Ramcoveho programu EK
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 22th International Conference Mixed Design of Integrated Circuits and Systems
ISBN
978-83-63578-06-0
ISSN
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e-ISSN
—
Number of pages
4
Pages from-to
567-570
Publisher name
IEEE
Place of publication
Piscataway
Event location
Toruň
Event date
Jun 25, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000364071600108