Charge Pump Design for Use in NVM Device Test and Measurement
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00233821" target="_blank" >RIV/68407700:21230/15:00233821 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Charge Pump Design for Use in NVM Device Test and Measurement
Original language description
Today, the emerging technology to fabricate deep-submicron Non-Volatile Memories (NVMs) requires extensive use of efficient methods for measurement and test. A high-voltage (HV) generator must be used to invoke NVM test modes, either placed on-chip or used from external. Our article focuses on the development of the Charge pump, being a core of such high-voltage generator. We consider an on-chip variant for the purpose of NVM measurement and test, the HV generator has to meet several criteria listed above. In our article we will particularly take into account the design criteria for the Charge pump to be used in such HV generator and the ways how to optimize its properties.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the 10th International Conference on Measurement
ISBN
978-80-969672-9-2
ISSN
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e-ISSN
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Number of pages
4
Pages from-to
203-206
Publisher name
VEDA
Place of publication
Bratislava
Event location
Smolenice
Event date
May 25, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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