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Influence of Radiation Defects on SiC Power Devices

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00236005" target="_blank" >RIV/68407700:21230/15:00236005 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Influence of Radiation Defects on SiC Power Devices

  • Original language description

    This study deals with the effect of irradiation on electrical characteristics of selected power devices based on silicon carbide.

  • Czech name

  • Czech description

Classification

  • Type

    O - Miscellaneous

  • CEP classification

    JA - Electronics and optoelectronics

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>

  • Continuities

    S - Specificky vyzkum na vysokych skolach

Others

  • Publication year

    2015

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů