Simulation and Characterization of 4H-SiC JBS Diodes Irradiated by Hydrogen and Carbon Ions
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F15%3A00236389" target="_blank" >RIV/68407700:21230/15:00236389 - isvavai.cz</a>
Result on the web
<a href="http://journal.dmcs.pl/vol.-6-no.-2" target="_blank" >http://journal.dmcs.pl/vol.-6-no.-2</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Simulation and Characterization of 4H-SiC JBS Diodes Irradiated by Hydrogen and Carbon Ions
Original language description
The paper deals with simulation and characterization of 4H-SiC JBS diodes irradiated by hydrogen and carbon Ions.
Czech name
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Czech description
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Classification
Type
J<sub>x</sub> - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
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Continuities
R - Projekt Ramcoveho programu EK
Others
Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
International Journal of Microelectronics and Computer Science
ISSN
2080-8755
e-ISSN
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Volume of the periodical
6
Issue of the periodical within the volume
2
Country of publishing house
PL - POLAND
Number of pages
5
Pages from-to
59-63
UT code for WoS article
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EID of the result in the Scopus database
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