Radiation Damage in 4H-SiC and Its Effect on Power Device Characteristics

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00236378" target="_blank" >RIV/68407700:21230/16:00236378 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.242.421" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/SSP.242.421</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/SSP.242.421" target="_blank" >10.4028/www.scientific.net/SSP.242.421</a>

Result language
angličtina
Original language name
Radiation Damage in 4H-SiC and Its Effect on Power Device Characteristics
Original language description
The paper deals with investigation of radiation damage produced in 4H-SiC by different projectiles and its effect on power device characteristics.
Czech name
—
Czech description
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Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Gettering and Defect Engineering in Semiconductor Technology XVI
ISBN
978-3-03835-608-0
ISSN
1662-9779
e-ISSN
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Number of pages
6
Pages from-to
421-426
Publisher name
Trans Tech Publications Inc.
Place of publication
Pfaffikon
Event location
Bad Staffelstein
Event date
Sep 20, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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Result description