Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00241099" target="_blank" >RIV/68407700:21230/16:00241099 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.858.856" target="_blank" >http://dx.doi.org/10.4028/www.scientific.net/MSF.858.856</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.4028/www.scientific.net/MSF.858.856" target="_blank" >10.4028/www.scientific.net/MSF.858.856</a>
Alternative languages
Result language
angličtina
Original language name
Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics
Original language description
The paper deals with investigation of the effect of electron irradiation on the electrical characteristics of 1700V 4H-SiC MOSFETs.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Silicon Carbide and Related Materials 2015
ISBN
978-3-0357-1042-7
ISSN
1662-9752
e-ISSN
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Number of pages
4
Pages from-to
856-859
Publisher name
Trans Tech Publications Ltd.
Place of publication
Pfaffikon
Event location
Giardini Naxos
Event date
Oct 4, 2015
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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