A New Criterion for Stability Assessment of the Microwave pHEMT-based Low-Noise Amplifiers
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00300814" target="_blank" >RIV/68407700:21230/16:00300814 - isvavai.cz</a>
Result on the web
<a href="http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7521697" target="_blank" >http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=7521697</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/IMFEDK.2016.7521697" target="_blank" >10.1109/IMFEDK.2016.7521697</a>
Alternative languages
Result language
angličtina
Original language name
A New Criterion for Stability Assessment of the Microwave pHEMT-based Low-Noise Amplifiers
Original language description
At present, the foremost low-noise amplifiers are based on usage of the pseudomorphic high-electron-mobility transistors (pHEMTs). However, in many cases, the amplifiers are often constructed at the limits of absolute stability or even in the region of potential instability because only such solutions give requested circuit properties as a trade-off between the transducer power gain and noise figure. The stability properties are mostly checked by the classical criteria such as the Rollett conditions, mu-factor etc. In the paper, a novel additional very efficient criterion is proposed, finding the most critical couple of poles and evaluating the ratio of imaginary and real part. The efficiency of the method is demonstrated on a low-noise antenna preamplifier for a multi-constellation satellite-navigation receiver based on an ATF-54143 pHEMT.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/TE01020186" target="_blank" >TE01020186: Integrated Satellite and Terrestrial Navigation Technologies Centre</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
2016 International Meeting for Future of Electron Devices, Kansai
ISBN
978-1-5090-1977-9
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
92-93
Publisher name
IEEE - Electron Devices Society
Place of publication
Piscataway
Event location
Kyoto
Event date
Jun 23, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000390435300035