Loss Factor of Alumina and AlN Thin Films Created by Reactive Magnetron Sputtering
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F16%3A00306787" target="_blank" >RIV/68407700:21230/16:00306787 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/ISSE.2016.7563224" target="_blank" >http://dx.doi.org/10.1109/ISSE.2016.7563224</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ISSE.2016.7563224" target="_blank" >10.1109/ISSE.2016.7563224</a>
Alternative languages
Result language
angličtina
Original language name
Loss Factor of Alumina and AlN Thin Films Created by Reactive Magnetron Sputtering
Original language description
Thin Al2O3 and AlN films have been created by reactive magnetron sputtering; oxygen and nitrogen have been used as working gases. The capacitors have been formed by evaporation of a strip across the Al electrodes with the dielectric film. Loss factor has been examined in dependence on the pressure of the working gas, the flow rate of the working gas and power of the generator. Conditions for producing of the films with the minimum loss factor have been found
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
—
Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proceedings of the International Spring Seminar on Electronics Technology
ISBN
978-1-5090-1389-0
ISSN
2161-2536
e-ISSN
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Number of pages
4
Pages from-to
378-381
Publisher name
IEEE Press
Place of publication
New York
Event location
Plzeň
Event date
May 18, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000387089800074