Radiation resistance of wide-bandgap semiconductor power transistiors
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F17%3A00311316" target="_blank" >RIV/68407700:21230/17:00311316 - isvavai.cz</a>
Result on the web
<a href="http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600447/full" target="_blank" >http://onlinelibrary.wiley.com/doi/10.1002/pssa.201600447/full</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1002/pssa.201600447" target="_blank" >10.1002/pssa.201600447</a>
Alternative languages
Result language
angličtina
Original language name
Radiation resistance of wide-bandgap semiconductor power transistiors
Original language description
The paper compares radiation resistance of SiC MOSFET and GaN HEMT to electron radiation.
Czech name
—
Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GAP102%2F12%2F2108" target="_blank" >GAP102/12/2108: Defects in Wide-Bandgap Semiconductors and Their Impact on Power and High-Temperature Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2017
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
ISSN
1862-6300
e-ISSN
1862-6319
Volume of the periodical
214
Issue of the periodical within the volume
4
Country of publishing house
DE - GERMANY
Number of pages
8
Pages from-to
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UT code for WoS article
000402158300014
EID of the result in the Scopus database
2-s2.0-85000454233