New Variant of a Negative 4-phase Charge Pump

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F18%3A00325275" target="_blank" >RIV/68407700:21230/18:00325275 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
New Variant of a Negative 4-phase Charge Pump
Original language description
Charge pump (CP) is a micropower alternative to conventional DC/DC converters. CPs have a small size and an easier integrability than conventional DC/DC converters. Nowadays, CPs became an integral part of low-voltage integrated circuits that contain some blocks with specific voltages. An example is non-volatile memories (Flash) that use programming voltage a greater than 10 V, but these circuits use power supply voltage about 1 V. Thus, these systems must integrate a positive CP that increases power supply voltage to an appropriate programming voltage. Required voltage gain of a CP can be decreased with a usage of modified programming scheme [1] that is based on negative bias. This paper is concentrated on a new concept of negative CP and comparison of this new concept with standard Dickson Charge Pump (DCP). The key parameters as voltage gain, rise time, number of elements, chip area and efficiency are compared by simulations executed by Mentor Graphics.
Czech name
—
Czech description
—

Publication year
2018
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
Proc. of 2018 IEEE 21st International Symposium on Design and Diagnostics of Electronic Circuits & Systems (DDECS)
ISBN
978-1-5386-5755-3
ISSN
—
e-ISSN
2473-2117
Number of pages
300
Pages from-to
—
Publisher name
IEEE
Place of publication
Piscataway, NJ
Event location
Budapest
Event date
Apr 25, 2018
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
—

Similar results(10)