Cross-Coupled Charge Pump Synthesis Based on Full Transistor-Level

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00333838" target="_blank" >RIV/68407700:21230/19:00333838 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.15598/aeee.v17i3.3061" target="_blank" >https://doi.org/10.15598/aeee.v17i3.3061</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.15598/aeee.v17i3.3061" target="_blank" >10.15598/aeee.v17i3.3061</a>

Result language
angličtina
Original language name
Cross-Coupled Charge Pump Synthesis Based on Full Transistor-Level
Original language description
This paper presents utility for the design of the cross-coupled charge pump, which is used for supplying peripherals with low current consumption on the chip, such as the EEPROM or FLASH memories. The article summarizes the knowledge in the field of the theoretical and practical analysis of the cross-coupled charge pump Design relationships and their connection with the pump parameters, as the threshold voltage, power supply voltage, clock signal frequency, etc., are applicated in the design algorithm. Optimal MOSFETs sizes (W, L) were found based on the time response characteristics of the pump sub-block. The goals include both maximize the voltage increase in the active interval of the clock signal and minimizing of the pump losses, as the switch reverse current, inverter cross current, etc.
Czech name
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Czech description
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Type
J<sub>SC</sub> - Article in a specialist periodical, which is included in the SCOPUS database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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