GaN Transistors Cooling Options Comparison

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F19%3A00333931" target="_blank" >RIV/68407700:21230/19:00333931 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/8883894" target="_blank" >https://ieeexplore.ieee.org/document/8883894</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/EDPE.2019.8883894" target="_blank" >10.1109/EDPE.2019.8883894</a>

Result language
angličtina
Original language name
GaN Transistors Cooling Options Comparison
Original language description
Three methods of cooling gallium nitride (GaN) transistors have been tested and directly compared together. Under similar conditions, top side cooled GaN was compared to the bottom side cooled type; both were of the same electrical parameters and were mounted on FR4 (fibreglass resin) and aluminium printed circuit boards. At equal dissipated power the proposed bottom side cooled transistor on aluminium board reaches half the temperature compared to the top side cooled one and one fourth of the temperature compared to the bottom side cooled GaN on FR4 board. A High speed driver is placed close to the transistor also on the aluminium IMS (Insulated Metal Substrate) board to reduce parasitic inductance of the gate driving path from control board to the high power side on the aluminium board.
Czech name
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Czech description
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Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection
2019 International Conference on Electrical Drives & Power Electronics (EDPE)
ISBN
978-1-7281-0389-1
ISSN
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e-ISSN
1339-3944
Number of pages
4
Pages from-to
323-326
Publisher name
Technical University of Košice
Place of publication
Košice
Event location
Nový Smokovec, The High Tatras
Event date
Sep 24, 2019
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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