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Precise control of the interlayer twist angle in large scale MoS2 homostructures

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00341816" target="_blank" >RIV/68407700:21230/20:00341816 - isvavai.cz</a>

  • Result on the web

    <a href="https://doi.org/10.1038/s41467-020-16056-4" target="_blank" >https://doi.org/10.1038/s41467-020-16056-4</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1038/s41467-020-16056-4" target="_blank" >10.1038/s41467-020-16056-4</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Precise control of the interlayer twist angle in large scale MoS2 homostructures

  • Original language description

    Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction-twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30 degrees twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics. Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS2 homostructures that enables continuous change in their indirect bandgap, Moire phonons and electrical properties.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    20501 - Materials engineering

Result continuities

  • Project

    <a href="/en/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centre of Advanced Photovoltaics</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2020

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    NATURE COMMUNICATIONS

  • ISSN

    2041-1723

  • e-ISSN

  • Volume of the periodical

    11

  • Issue of the periodical within the volume

    1

  • Country of publishing house

    GB - UNITED KINGDOM

  • Number of pages

    8

  • Pages from-to

  • UT code for WoS article

    000531425700034

  • EID of the result in the Scopus database

    2-s2.0-85084111228