Precise control of the interlayer twist angle in large scale MoS2 homostructures
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F20%3A00341816" target="_blank" >RIV/68407700:21230/20:00341816 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1038/s41467-020-16056-4" target="_blank" >https://doi.org/10.1038/s41467-020-16056-4</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1038/s41467-020-16056-4" target="_blank" >10.1038/s41467-020-16056-4</a>
Alternative languages
Result language
angličtina
Original language name
Precise control of the interlayer twist angle in large scale MoS2 homostructures
Original language description
Twist angle between adjacent layers of two-dimensional (2D) layered materials provides an exotic degree of freedom to enable various fascinating phenomena, which opens a research direction-twistronics. To realize the practical applications of twistronics, it is of the utmost importance to control the interlayer twist angle on large scales. In this work, we report the precise control of interlayer twist angle in centimeter-scale stacked multilayer MoS2 homostructures via the combination of wafer-scale highly-oriented monolayer MoS2 growth techniques and a water-assisted transfer method. We confirm that the twist angle can continuously change the indirect bandgap of centimeter-scale stacked multilayer MoS2 homostructures, which is indicated by the photoluminescence peak shift. Furthermore, we demonstrate that the stack structure can affect the electrical properties of MoS2 homostructures, where 30 degrees twist angle yields higher electron mobility. Our work provides a firm basis for the development of twistronics. Interlayer twist angle between vertically stacked 2D material layers can trigger exciting fundamental physics. Here, the authors report precise control of interlayer twist angle of stacked centimeter scale multilayer MoS2 homostructures that enables continuous change in their indirect bandgap, Moire phonons and electrical properties.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20501 - Materials engineering
Result continuities
Project
<a href="/en/project/EF15_003%2F0000464" target="_blank" >EF15_003/0000464: Centre of Advanced Photovoltaics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2020
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
NATURE COMMUNICATIONS
ISSN
2041-1723
e-ISSN
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Volume of the periodical
11
Issue of the periodical within the volume
1
Country of publishing house
GB - UNITED KINGDOM
Number of pages
8
Pages from-to
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UT code for WoS article
000531425700034
EID of the result in the Scopus database
2-s2.0-85084111228