New method for Si-wafer resistivity determination

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F21%3A00350991" target="_blank" >RIV/68407700:21230/21:00350991 - isvavai.cz</a>

Result on the web

<a href="https://technology.fel.cvut.cz/wp-content/uploads/2021/10/21.pdf" target="_blank" >https://technology.fel.cvut.cz/wp-content/uploads/2021/10/21.pdf</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.14311/ISPS.2021.021" target="_blank" >10.14311/ISPS.2021.021</a>

Result language

angličtina

Original language name

New method for Si-wafer resistivity determination

Original language description

Wafer resistivity is one of the most important parameters in production of Power Semiconductor Devices (PSD). This parameter is mainly responsible for achieving required breakdown voltage and other electric parameters. Proposal article describes principles and details of newly designed resonant method and new equipment according patent [1] and compares it with commonly known 4point method. This new method is based on resonant measurement of capacity and following calculation. New method exhibits comparable accuracy with 4point method and brings additional advantages.

Czech name

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Czech description

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Type

D - Article in proceedings

CEP classification

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OECD FORD branch

20201 - Electrical and electronic engineering

Project

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Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2021

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

ISPS'21 PROCEEDINGS

ISBN

978-80-01-06874-8

ISSN

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e-ISSN

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Number of pages

6

Pages from-to

135-140

Publisher name

České vysoké učení technické v Praze

Place of publication

Praha

Event location

Praha

Event date

Aug 26, 2021

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

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