High-Efficiency and High-Power-Density Semiconductor Converters

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F23%3A00367661" target="_blank" >RIV/68407700:21230/23:00367661 - isvavai.cz</a>
Result on the web
<a href="https://ieeexplore.ieee.org/document/10221401" target="_blank" >https://ieeexplore.ieee.org/document/10221401</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/PIERS59004.2023.10221401" target="_blank" >10.1109/PIERS59004.2023.10221401</a>

Result language
angličtina
Original language name
High-Efficiency and High-Power-Density Semiconductor Converters
Original language description
The paper describes development of high-efficiency and high-power-density semiconductor converters intended for a two-stage charging station equipped with gallium nitride-based transistors. It consists of an input PWM rectifier that includes an active power factor correction (part PFC) and an output DC-DC voltage converter with an AC intermediate circuit, containing a single-phase bridge voltage resonant inverter with a series resonant LLC circuit on the primary side of the isolation transformer and a single-phase bridge synchronous rectifier on the secondary side of the transformer. The use of resonant topology significantly reduces the switching losses of transistors. The converter ensures the output voltage according to the requirements of the traction battery and the demanded galvanic isolating the feeding network from the being charged vehicle battery and other equipment. The maximum efficiency of the functional sample of the charging station is 97 % and the power density is 3.5 kW per liter.
Czech name
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Czech description
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Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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