Power Diode Structures Realized on (113) oriented Boron Doped Diamond
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F23%3A00368435" target="_blank" >RIV/68407700:21230/23:00368435 - isvavai.cz</a>
Result on the web
<a href="http://hdl.handle.net/10467/111867" target="_blank" >http://hdl.handle.net/10467/111867</a>
DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Power Diode Structures Realized on (113) oriented Boron Doped Diamond
Original language description
The article deals with the preparation and characterization of ohmic contacts, pseudo-vertical, and vertical Schottky barrier diodes on (113) oriented boron doped diamond.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/GA20-11140S" target="_blank" >GA20-11140S: Essential Elements of Diamond Power Electronics</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
ISPS'23 PROCEEDINGS
ISBN
978-80-01-07198-4
ISSN
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e-ISSN
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Number of pages
6
Pages from-to
69-74
Publisher name
České centrum Institution of Engineering and Technology
Place of publication
Praha
Event location
Praha
Event date
Aug 30, 2023
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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