Use of energy harvesting for thermally stressed GaN semiconductor structures

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F24%3A00379595" target="_blank" >RIV/68407700:21230/24:00379595 - isvavai.cz</a>
Result on the web
—
DOI - Digital Object Identifier
—

Result language
angličtina
Original language name
Use of energy harvesting for thermally stressed GaN semiconductor structures
Original language description
The core of the work is based on the thermoelectric phenomenon. The analysis of the thermoelectric generator is solved. The goal was to verify the possibility of using the thermoelectric phenomenon, verify the properties using the model, determine the basic characteristics, find the optimal resistive load of the system, the output voltage and the achieved output power. another continuation of the work is hybrid integration with semiconductor structures. The work utilizes waste heat leaving high-performance GaN semiconductor structures. A thermoelectric generator converts waste heat into electrical energy. 4 types of thermoelectric generators (TEGs) were analyzed. The obtained electrical energy was stored in a supercapacitor. The LTC3108 integrated circuit was designed to control the operation of a thermoelectric generator. Thermoelectric batteries (TEC1-12707, TEC1-071080, TEG-127020 and TEG-127009) were used as thermoelectric power generators. For example, Micropelt offers a range of commercial products manu
Czech name
—
Czech description
—

Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Similar results(10)