Exceptional radiation resistance of hardened amorphous SiC under high-temperature hydrogen ion implantation

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21230%2F25%3A00383318" target="_blank" >RIV/68407700:21230/25:00383318 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1016/j.jeurceramsoc.2025.117459" target="_blank" >https://doi.org/10.1016/j.jeurceramsoc.2025.117459</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.jeurceramsoc.2025.117459" target="_blank" >10.1016/j.jeurceramsoc.2025.117459</a>

Result language
angličtina
Original language name
Exceptional radiation resistance of hardened amorphous SiC under high-temperature hydrogen ion implantation
Original language description
This study provides a compelling comparison of the structural and mechanical responses of single-crystal silicon carbide (sc-SiC), nanocrystalline silicon carbide (nc-SiC), and amorphous silicon carbide (am-SiC) to hydrogen ion implantation at 650 ℃ across varying fluences. While both sc-SiC and nc-SiC exhibit blistering, microcracking, and exfoliation, am-SiC remains free of blisters, demonstrating superior resilience. Notably, nc-SiC, with its high density of stacking faults (SFs), requires a higher fluence to initiate blistering compared to sc-SiC. In sc-SiC, blistering leads to increased hardness, whereas in nc-SiC, the degradation of the SF structure results in a reduction in hardness. In contrast, am-SiC undergoes structural relaxation during irradiation, resulting in a significant increase in hardness while maintaining its structural integrity, with only the formation of nano-sized spherical bubbles observed. These findings highlight the exceptional suitability of am-SiC for nuclear applications, where resistance to radiation-induced microcracking is critical
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20504 - Ceramics

Project
<a href="/en/project/EH22_008%2F0004590" target="_blank" >EH22_008/0004590: Robotics and advanced industrial production</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2025
Confidentiality
C - Předmět řešení projektu podléhá obchodnímu tajemství (§ 504 Občanského zákoníku), ale název projektu, cíle projektu a u ukončeného nebo zastaveného projektu zhodnocení výsledku řešení projektu (údaje P03, P04, P15, P19, P29, PN8) dodané do CEP, jsou upraveny tak, aby byly zveřejnitelné.

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