Study of the Doped ZnO Thin Films
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F03%3A04092937" target="_blank" >RIV/68407700:21340/03:04092937 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Study of the Doped ZnO Thin Films
Original language description
Photoluminescence of Li doped ZnO thin films prepared in the plasmachemical reactor was studied after annealing of samples in the hydrogen atmosphere at temperatures within the range 300 - 600 C.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BM - Solid-state physics and magnetism
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2003
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Development of Materials Science in Research and Education
ISBN
80-89088-16-3
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
67-68
Publisher name
STU
Place of publication
Bratislava
Event location
Račkova Dolina
Event date
Sep 15, 2003
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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