Millimeter precision laser ranging using solid state photon counting

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F06%3A04120751" target="_blank" >RIV/68407700:21340/06:04120751 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Millimeter precision laser ranging using solid state photon counting
Original language description
We are reporting our results in research and development in the field of avalanche semiconductor single photon detectors and their application in high precision laser ranging during the last 20 years. Our objectives where: avalanche detector structure, sensitive area diameters exceeding 50 microns, active quenching and gating electronic circuit, high timing resolution and rugged design. Avalanche photodiodes specifically designed for photon counting devices have been developed on the basis of various semiconductor materials: Si, Ge, SiGe, GaP, GaAs and InGaAs. All the semiconductor detectors operate at a room temperature or at thermoelectrically achievable temperatures except of the germanium based detector, which requires liquid nitrogen cooling. Electronic circuits for these detectors biasing, quenching and control have been developed and optimised for different applications.
Czech name
Není k dispozici
Czech description
Není k dispozici

Project
<a href="/en/project/GA205%2F05%2F0110" target="_blank" >GA205/05/0110: Satellite laser rranging station for ESA and NASA Satellites</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2006
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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