Avalanche Photodiode Structure for Photon Counting on Si0.6Ge0.4 Epitaxial Layer
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F07%3A04130885" target="_blank" >RIV/68407700:21340/07:04130885 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Alternative languages
Result language
angličtina
Original language name
Avalanche Photodiode Structure for Photon Counting on Si0.6Ge0.4 Epitaxial Layer
Original language description
We are presenting the results of the research and development of an avalanche photodiode structure, on the basis of SiGe epitaxial layer on Si wafer. The ultimate goal is to develop a solid state photon counting detector with picosecond timing resolutionand stability and a spectral sensitivity beyond 1100 nanometers. The technology development steps on the Si0.6Ge0.4 epitaxial layer are presented together with the first results of the preparation of the shallow junction and its parameters. The abilityof the avalanche structure to operate in a Geiger mode has been demonstrated for the first time.
Czech name
Není k dispozici
Czech description
Není k dispozici
Classification
Type
D - Article in proceedings
CEP classification
JB - Sensors, detecting elements, measurement and regulation
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2007
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Physics of Semiconductors: 28th International Conference on the Physics of Semiconductors
ISBN
978-0-7354-0397-0
ISSN
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e-ISSN
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Number of pages
2
Pages from-to
1429-1430
Publisher name
American Institute of Physics
Place of publication
Melville, New York
Event location
Vienna
Event date
Jul 24, 2006
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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