Avalanche dynamics in silicon avalanche single- and few-photon sensitive photodiode

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F09%3A00159065" target="_blank" >RIV/68407700:21340/09:00159065 - isvavai.cz</a>

Result on the web

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DOI - Digital Object Identifier

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Result language

angličtina

Original language name

Avalanche dynamics in silicon avalanche single- and few-photon sensitive photodiode

Original language description

We are presenting the results of the study of the Single Photon Avalanche Diode (SPAD) avalanche pulse response rise-time and its dependence on several key parameters. We were investigating the unique properties of K14 type SPAD with its high delay uniformity of 200 ?m active area, the character of avalanche, and the correlation between the avalanche build-up time and the photon number involved in the avalanche trigger. The detection chip was operated with bias higher then breakdown voltage, ie. in Geiger mode. The detection chip was operated in a passive quenching circuit with active gating. This set-up enabled us to monitor both the diode reverse current using an electrometer and a fast digitizing oscilloscope. The experimental results are presented.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

JB - Sensors, detecting elements, measurement and regulation

OECD FORD branch

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Project

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Continuities

Z - Vyzkumny zamer (s odkazem do CEZ)<br>S - Specificky vyzkum na vysokych skolach

Publication year

2009

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Journal of Physics: Conference Series

ISSN

1742-6588

e-ISSN

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Volume of the periodical

193

Issue of the periodical within the volume

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Country of publishing house

GB - UNITED KINGDOM

Number of pages

3

Pages from-to

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UT code for WoS article

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EID of the result in the Scopus database

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