Temperature Dependent Output Characteristics of Pr:YAP Microchip Lasers at 747 nm and 662 nm Wavelengths
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00181194" target="_blank" >RIV/68407700:21340/11:00181194 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1109/CLEOE.2011.5942542" target="_blank" >http://dx.doi.org/10.1109/CLEOE.2011.5942542</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/CLEOE.2011.5942542" target="_blank" >10.1109/CLEOE.2011.5942542</a>
Alternative languages
Result language
angličtina
Original language name
Temperature Dependent Output Characteristics of Pr:YAP Microchip Lasers at 747 nm and 662 nm Wavelengths
Original language description
In this contribution, following our previous Pr:YAP crystal investigation, continuous-wave Pr:YAP microchip laser systems operating at 747 and 662 nm wavelength are reported. Moreover, temperature behavior of the gain media in term of laser output properties and emission spectra are described. Laser cavity was formed by dielectric films directly deposited on the crystal surfaces. For longitudinally pumping of the Pr:YAP materials, a 1-W GaN laser diode operating around 448 nm was employed.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
BH - Optics, masers and lasers
OECD FORD branch
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Result continuities
Project
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Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)
Others
Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
CLEO/Europe-EQEC 2011 Conference Digist
ISBN
978-1-4577-0532-8
ISSN
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e-ISSN
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Number of pages
1
Pages from-to
"CA-P34Sun"
Publisher name
IEEE
Place of publication
New Jersey
Event location
Mnichov
Event date
May 22, 2011
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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