Characterization of Eu2O3 Nanolayers Deposited on Semiconductors

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00190632" target="_blank" >RIV/68407700:21340/11:00190632 - isvavai.cz</a>
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Characterization of Eu2O3 Nanolayers Deposited on Semiconductors
Original language description
We report on the synthesis of europium oxide nanoparticles and the SEM characterization of europium oxide deposited on semiconductor wafers. The motivation is to prepare high quality nanolayers for Schottky diodes. Europium oxide thin film would be attractive for use in many nanoscale application i.e. ultraviolet-photoactive optical coating, electroluminescent display, and optical data storage. Europium oxide (Eu2O3) is the stable sesquioxide of the Eu3+ ion, which is exploited as a phosphorescence agent in light-emitting compounds. The optical properties of Eu2O3 originate from the Eu3+ ion absorption, whose primary fluorescent peak resides at 612nm. The core optical transitions are unaffected by the size or surface morphology of the materials. Europium oxides nanoparticles were prepared in colloids solution. A typical preparation is as follows; to the solution of europium chloride is added trioctyl phosphine oxide (TOPO) solution which is bound to the surface of nanoparticles. The pr
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
Z - Vyzkumny zamer (s odkazem do CEZ)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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