Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00190643" target="_blank" >RIV/68407700:21340/11:00190643 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/11:00374578
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Graphite Schottky barriers on n-InP and n-GaN with deposited Pd, Pt or bimetallic Pd/Pt nanoparticles for H2 sensing
Original language description
High Schottky barriers have been achieved by applying colloidal graphite on n-type InP and on n-type GaN semiconductor crystal wafers. The barrier heights were shown to be close to Schottky-Mott limit ad thermionic emission theory. Porous properties of the graphite Schottky contacts were demonstrated by scanning electron microscopy. Besides, on the semiconductors, prior to the graphite, sub-monolayers of platinum group catalytic metals were deposited by electrophoresis from colloid solutions. The Schottky contacts along with ohmic contacts prepared on the other site of the wafers formed diodes with high rectification ratios and low reverse leakage currents. Diodes were tested on sensitivity to hydrogen by measuring current after alternative exposure to0.1 % hydrogen/nitrogen blend and air Hydrogen sensing was improved by several orders-of-magnitude over the best results reported previously. Diodes with bimetal Pd/Pt (2:1) nanoparticles were compared with those containing Pd or Pt nano
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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