Study of Layers of Pd on InP

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F11%3A00190665" target="_blank" >RIV/68407700:21340/11:00190665 - isvavai.cz</a>
Alternative codes found
RIV/67985882:_____/11:00374575
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Study of Layers of Pd on InP
Original language description
Layers of Pd nanoparticles on n-InP seem to be good structure for monitoring hydrogen concentration in the air. Generally, energetic barrier, called Schottky barrier, is formed on the interface between metal and semiconductor. This barrier is lowered bythe presence of hydrogen and this influences the amount of current which flows through the structure. Pd was chosen for its ability to dissociate hydrogen molecules to single atoms. This fact is further enhanced by nanoparticle form of this metal becauseof its high surface-to-volume ratio. Pd nanoparticles were prepared in colloid solution stabilized by AOT. The layers were prepared by electrophoretic deposition through the mask of polystyrene spheres. Electrophoreticdeposition lies in acceleration ofparticles in electric field in the direction towards the InP wafer. SEM measurement showed that particles in colloid solution are separated and after deposition they form small aggregates on InP. The size of these aggregates depends on th
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year
2011
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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