Identification of Surface Defects and Subsurface Dopants in a Delta-Doped System Using Simultaneous nc-AFM/STM and DFT

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F14%3A00369807" target="_blank" >RIV/68407700:21340/14:00369807 - isvavai.cz</a>
Alternative codes found
RIV/68378271:_____/14:00436462
Result on the web
<a href="https://doi.org/10.1021/jp503410j" target="_blank" >https://doi.org/10.1021/jp503410j</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1021/jp503410j" target="_blank" >10.1021/jp503410j</a>

Result language
angličtina
Original language name
Identification of Surface Defects and Subsurface Dopants in a Delta-Doped System Using Simultaneous nc-AFM/STM and DFT
Original language description
We have studied the near surface defects of the delta-doped B:Si(111)-(root 3 x root 3)R30 degrees system using a combination of scanning tunneling microscopy, noncontact atomic force microscopy, Kelvin probe force spectroscopy, total energy OFT, and STM theoretical simulations. We positively identify and characterize two near surface defects: the adatom vacancy and a B substitutional defect located in the second Si bilayer. We also confirm the assignment of the dangling-bond defect. Additionally, the influence that the subsurface B dopants have on the surface electronic structure, the modulation of the surface potential and the chemical activity of the surface is investigated.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
21001 - Nano-materials (production and properties)

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2014
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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