Microchip laser based on Yb:YAG/V:YAG monolith crystal
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F16%3A00304679" target="_blank" >RIV/68407700:21340/16:00304679 - isvavai.cz</a>
Result on the web
<a href="http://dx.doi.org/10.1117/12.2212354" target="_blank" >http://dx.doi.org/10.1117/12.2212354</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2212354" target="_blank" >10.1117/12.2212354</a>
Alternative languages
Result language
angličtina
Original language name
Microchip laser based on Yb:YAG/V:YAG monolith crystal
Original language description
V:YAG crystal was investigated as a passive Q-switch of longitudinally diode-pumped microchip laser, emitting radiation at wavelength 1030.5 nm. This laser was based on diffusion bonded monolith crystal (diameter 3mm) which combines in one piece an active laser part (Yb:YAG crystal, 10 at.% Yb/Y, 3mm long) and saturable absorber (V:YAG crystal, 2mm long, initial transmission 86% @ 1031 nm). The microchip resonator consisted of dielectric mirrors directly deposited on the monolith surfaces (pump mirror HT @ 968nm and HR @ 1031nm on Yb:YAG part, output coupler with re ection 55% @ 1031nm on the V:YAG part). For longitudinal CW pumping of Yb:YAG part, a fibre coupled (core diameter 100 um, NA= 0:22, emission @ 968 nm) laser diode was used. The laser threshold was 3.8W. The laser slope efficiency for output mean in respect to incident pumping was 16 %. The linearly polarized generated transversal intensity beam profile was close to the fundamental Gaussian mode. The generated pulse length, stable and mostly independent on pumping power, was equal to 1.3 ns (FWHM). The single pulse energy was increasing with the pumping power and for the maximum pumping 9.7W it was 78 uJ which corresponds to the pulse peak-power 56kW. The maximum Yb:YAG/V:YAG microchip laser mean output power of 1W was reached without observable thermal roll-over. The corresponding Q-switched pulses repetition rate was 13.1 kHz.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JA - Electronics and optoelectronics
OECD FORD branch
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Result continuities
Project
<a href="/en/project/TA03011141" target="_blank" >TA03011141: Large-size Oxidic Single Crystals for High-tech Optoelectronic Applications</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2016
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. SPIE 9726, Solid State Lasers XXV: Technology and Devices
ISBN
978-1-62841-961-0
ISSN
0277-786X
e-ISSN
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Number of pages
9
Pages from-to
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Publisher name
SPIE
Place of publication
Bellingham (stát Washington)
Event location
San Francisco
Event date
Feb 13, 2016
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
000383765300039