Hot Carrier Cooling in In0.17Ga0.83As/GaAs0.80P0.20 Multiple Quantum Wells: The Effect of Barrier Thickness

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F16%3A00308833" target="_blank" >RIV/68407700:21340/16:00308833 - isvavai.cz</a>

Result on the web

<a href="http://ieeexplore.ieee.org/document/7295560/" target="_blank" >http://ieeexplore.ieee.org/document/7295560/</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1109/JPHOTOV.2015.2480222" target="_blank" >10.1109/JPHOTOV.2015.2480222</a>

Result language

angličtina

Original language name

Hot Carrier Cooling in In0.17Ga0.83As/GaAs0.80P0.20 Multiple Quantum Wells: The Effect of Barrier Thickness

Original language description

The hot carrier solar cell is an advanced concept photovoltaic device that is predicted to deliver efficiencies in excess of conventional single bandgap devices. The design requires the ability to concurrently have extended carrier thermalization times within an absorber material, giving a hot carrier population, and the ability to efficiently collect the hot carriers at an energy above the bandgap of the absorber material. In order to achieve this, we require an absorber material with a long-lived hot carrier population. We investigate the carrier thermalization rates of InIn0.17Ga0.83As/GaAs0.80P0.20 multiple quantum well samples with different barrier thicknesses. For a 40 quantum well strain-balanced structure, the cooling lifetime is found to be 1.23 ± 0.07 ns, but in samples which are not strain-balanced, defect-assisted carrier cooling increases the thermalization rate. Immediately following an ultrafast excitation, the initial carrier temperature is greater in samples with wider barriers. However, any gain in carrier temperature from utilizing wide barriers is negated by an increased thermalization rate as one deviates from strain-balanced conditions. We conclude that strain balancing is required for multiple quantum well hot carrier absorbers.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

—

Project

—

Continuities

I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

IEEE Journal of Photovoltaics

ISSN

2156-3381

e-ISSN

—

Volume of the periodical

6

Issue of the periodical within the volume

1

Country of publishing house

US - UNITED STATES

Number of pages

6

Pages from-to

166-171

UT code for WoS article

000367251900023

EID of the result in the Scopus database

2-s2.0-84943597556