Yb:YAG disc for high energy laser systems

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F17%3A00315749" target="_blank" >RIV/68407700:21340/17:00315749 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1117/12.2249039" target="_blank" >http://dx.doi.org/10.1117/12.2249039</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1117/12.2249039" target="_blank" >10.1117/12.2249039</a>

Result language

angličtina

Original language name

Yb:YAG disc for high energy laser systems

Original language description

Large Yb:YAG crystals were grown using of new improved technology enabling to produce YAG crystals without central growth defect. The crystals diameter reached 115-120 mm and their central part was used for manufacturing of discs with the diameter larger than 55 mm. Both sides of this discs were polished and coated. Doping concentration of Yb3+ ions in Yb:YAG crystals was measured using of X-ray fluorescence spectrometry. Absorption coefficient of Yb:YAG was measured for different doping concentration of Yb3+ ions. Fluorescence decay time of Yb:YAG was measured at temperatures of 300 K and 80 K. We found the fluorescence decay time of the values of 0.95-1 ms at both temperatures stable and independent on the Yb3+ doping concentration in the range of 1-10 at.% Yb/Y demonstrating high chemical purity of grown crystals. Optical homogeneity as measured using of Fizeau double pass interferometer at 633 nm resulted with PV values lower than 0.15 lambda on clear aperture of 35 mm. Polished surfaces were ideally parallel with the wedge lower than 2 arcsec. Uniformity of laser properties of Yb:YAG was veri fied by scanning of the disc as active media in plan-convex pulsed laser resonator pumped by semiconductor diode (wavelength 969 nm, pumping beam diameter 100 mu m). It was confirmed, that newly developed technology allows to manufacture very large high quality Yb:YAG discs suitable for high power lasers and amplifiers.

Czech name

—

Czech description

—

Type

D - Article in proceedings

CEP classification

—

OECD FORD branch

20201 - Electrical and electronic engineering

Project

<a href="/en/project/TA03011141" target="_blank" >TA03011141: Large-size Oxidic Single Crystals for High-tech Optoelectronic Applications</a><br>

Continuities

P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Publication year

2017

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Article name in the collection

Proc. SPIE 10082 Solid State Lasers XXVI: Technology and Devices

ISBN

9781510606050

ISSN

0277-786X

e-ISSN

—

Number of pages

9

Pages from-to

—

Publisher name

SPIE

Place of publication

Bellingham

Event location

San Francisco

Event date

Jan 28, 2017

Type of event by nationality

WRD - Celosvětová akce

UT code for WoS article

000402427300012