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Temperature Influence on Microchip Lasers Based on Nd:YAG Crystal

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F19%3A00334023" target="_blank" >RIV/68407700:21340/19:00334023 - isvavai.cz</a>

  • Result on the web

    <a href="http://dx.doi.org/10.1117/12.2509507" target="_blank" >http://dx.doi.org/10.1117/12.2509507</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1117/12.2509507" target="_blank" >10.1117/12.2509507</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Temperature Influence on Microchip Lasers Based on Nd:YAG Crystal

  • Original language description

    The influence of temperature (from 80 up to 400 K) on emission of microchip lasers based on Nd:YAG crystal together with its spectroscopic properties was investigated. Three microchip lasers primarily designed for emission at 1.06, 1.32, and 1.44 um, were tested. For all three lasers, the same parameters of Nd:YAG rod were used (Nd-doping 0.9 at.% Nd/Y, length of 5 mm, diameter 5 mm). Resonator mirrors were deposited directly on the laser crystal faces. The output coupler transmission for desired wavelength was 2-5 %. The microchip lasers were placed in the temperature controlled cupreous holder inside vacuum chamber of the liquid nitrogen cryostat. The lasers were longitudinally pumped by 808nm fibre-coupled pulsed laser diode. The output microchip laser emission wavelength, laser threshold, laser slope efficiency, and laser beam profile were measured in temperature range from 80 up to 400 K. For all three samples the best results were obtained for temperature in range 200-250 K.

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

  • OECD FORD branch

    20201 - Electrical and electronic engineering

Result continuities

  • Project

    <a href="/en/project/FV10124" target="_blank" >FV10124: New laser rods and discs for modern diode pumped lasers</a><br>

  • Continuities

    P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)

Others

  • Publication year

    2019

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    Proc. SPIE 10896 Solid State Lasers XXVIII: Technology and Devices

  • ISBN

    978-1-5106-2434-4

  • ISSN

    0277-786X

  • e-ISSN

  • Number of pages

    10

  • Pages from-to

  • Publisher name

    SPIE

  • Place of publication

    Bellingham

  • Event location

    San Francisco

  • Event date

    Feb 2, 2019

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article

    000483062600043