Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F23%3A00367178" target="_blank" >RIV/68407700:21340/23:00367178 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1117/12.2646337" target="_blank" >https://doi.org/10.1117/12.2646337</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.2646337" target="_blank" >10.1117/12.2646337</a>
Alternative languages
Result language
angličtina
Original language name
Gain-switched Ti:Sapphire microchip laser investigation within 78-300 K temperature range
Original language description
Influence of temperature on gain-switched Ti:Sapphire laser based on a microchip resonator geometry is investigated. Laser performances are described within 78–300K temperature range. A frequency doubled radiation originating from the diode pumped Yb:YAG/Cr:YAG microchip crystal was used as a pump source, providing 2 ns pulses with a maximum energy of 113 μJ. The best output from gain-switched Ti:Sapphire laser was achieved at cryogenic temperature — 16 μJ of the output energy in 2 ns pulse at ~746 nm wavelength. The corresponding slope efficiency related to incident pump energy was 16 %. Taking into account the upper estimation of the input energy absorbed in the crystal, the slope efficiency with respect to absorbed pump energy was determined to be 27%.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
<a href="/en/project/EF16_019%2F0000778" target="_blank" >EF16_019/0000778: Center for advanced applied science</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. SPIE 12399, Solid State Lasers XXXII: Technology and Devices
ISBN
9781510659032
ISSN
0277-786X
e-ISSN
1996-756X
Number of pages
8
Pages from-to
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Publisher name
SPIE
Place of publication
Bellingham (stát Washington)
Event location
San Francisco, California
Event date
Jan 28, 2023
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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