Efficient resonant diode pumping of 2 μm thulium lasers at 1.7 μm
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21340%2F24%3A00377859" target="_blank" >RIV/68407700:21340/24:00377859 - isvavai.cz</a>
Result on the web
<a href="https://doi.org/10.1117/12.3002383" target="_blank" >https://doi.org/10.1117/12.3002383</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1117/12.3002383" target="_blank" >10.1117/12.3002383</a>
Alternative languages
Result language
angličtina
Original language name
Efficient resonant diode pumping of 2 μm thulium lasers at 1.7 μm
Original language description
Tm3+-doped media are actively researched due to the 2 um laser transition F3(4)-> H3(6) of Tm(3+)ion. A diode pumping of the H3(4) manifold has become a standard excitation method, utilizing the availability of 0.8 um GaAlAs-based diodes and efficient cross-relaxation energy transfer. An essential drawback of this scheme results from a strong inter-ionic distance dependence of the cross-relaxation, which therefore requires sufficient Tm(3+)doping to achieve the desired quantum efficiency. This can in turn result in an increased probability of up-conversion losses, clustering of Tm3+ ions, increased generated heat, more difficulties with material growth, and less favorable thermal properties. In this proceeding, we aim to bring attention to the resonant diode pumping of the F-3(4) manifold in the 1.6-1.8 um region and its feasibility. This excitation scheme has a low quantum defect, it circumvents the cross-relaxation requirements, and it is supported by broad absorption peaks. The commercial availability and output power of such diodes is already adequate for a solid-state laser pump source. To illustrate the feasibility, we summarize and expand our results with lasers based on Tm:YAG, Tm:YAP, Tm:YLF, Tm:GGAG and Tm, Ho:GGAG. Crystals were pumped using a 25 W fiber-coupled 1:1 focused diode laser (core diam. = 400 um, waist diam. = 376 um, NA = 0.22, M2 = 52) emitting in the 1.68-1.71 um region. Despite the relatively low spatial and spectral quality of the used 1.7 um diode emission, favorable results were obtained, such as an efficiency of 80% with respect to absorbed power, multi-watt output power in CW regime, or efficient operation of low-concentration crystals.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering
Result continuities
Project
—
Continuities
S - Specificky vyzkum na vysokych skolach
Others
Publication year
2024
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Proc. SPIE 12864, Solid State Lasers XXXIII: Technology and Devices
ISBN
978-1-5106-6987-1
ISSN
0277-786X
e-ISSN
1996-756X
Number of pages
14
Pages from-to
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Publisher name
SPIE
Place of publication
Bellingham (stát Washington)
Event location
San Francisco, CA
Event date
Jan 27, 2024
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
001211786700002