0.3V Bulk-Driven Current Conveyor

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21460%2F19%3A00340702" target="_blank" >RIV/68407700:21460/19:00340702 - isvavai.cz</a>
Alternative codes found
RIV/00216305:26220/19:PU132073
Result on the web
<a href="https://doi.org/10.1109/ACCESS.2019.2916897" target="_blank" >https://doi.org/10.1109/ACCESS.2019.2916897</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1109/ACCESS.2019.2916897" target="_blank" >10.1109/ACCESS.2019.2916897</a>

Result language
angličtina
Original language name
0.3V Bulk-Driven Current Conveyor
Original language description
This paper presents the design and the experimental results of a sub 0.5 V bulk-driven (BD) current conveyor (CCII) using 0.18 mu m TSMC CMOS technology with a total chip area of 0.0134 mm(2). All transistors are biased in the subthreshold region for low-voltage low-power operation and the input transistors are controlled from their bulk terminals for rail-to-rail input voltage range. The circuit is designed to work with voltage supply (V-DD = 0.3V), which is much lower than the threshold voltage of the MOS transistor (V-TH = 0.5V) while consuming 19 nW of power. The measurement results confirm the proper function of the proposed circuit.
Czech name
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Czech description
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Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
20201 - Electrical and electronic engineering

Project
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Continuities
I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace

Publication year
2019
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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