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Dynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and Timepix

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F12%3A00204235" target="_blank" >RIV/68407700:21670/12:00204235 - isvavai.cz</a>

  • Result on the web

  • DOI - Digital Object Identifier

Alternative languages

  • Result language

    angličtina

  • Original language name

    Dynamics of Charge Collection in Pixelated Semiconductor Sensor Studied with Heavy Ions and Timepix

  • Original language description

    This paper presents a novel technique allowing for the measurement and visualization of the spatial distribution and time evolution of the charge collection process in semiconductor sensors of ionizing radiation. The study was carried out with a pixelated high resistivity silicon sensor bump-bonded to the Timepix readout chip (256 x 256 pixels, with pitch of 55 ?m). The sensor was irradiated with energetic protons (132 MeV) and carbon ions (240MeV/u) entering the sensor at shallow angles. Such ions penetrate the full sensor thickness ionizing and depositing charge along their tracks. The charge deposited is collected by individual pixels of the Timepix chip operated in Time mode. The overall accuracy of these measurements was enhanced by averaging manyparticle tracks. The time accuracy is in order of nanoseconds and the position accuracy is about 5 ?m. The purpose of this work is to demonstrate the accurate measurement that may be used with the mathematical model to investigate the el

  • Czech name

  • Czech description

Classification

  • Type

    D - Article in proceedings

  • CEP classification

    BG - Nuclear, atomic and molecular physics, accelerators

  • OECD FORD branch

Result continuities

  • Project

    <a href="/en/project/TA01010237" target="_blank" >TA01010237: Facility for nondestructive testing, diagnostics and 3D imaging based on neutron radiography and tomography.</a><br>

  • Continuities

    Z - Vyzkumny zamer (s odkazem do CEZ)

Others

  • Publication year

    2012

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Article name in the collection

    2012 IEEE Nuclear Science Symposium and Medical Imaging Conference Record (NSS/MIC)

  • ISBN

    978-1-4673-2029-0

  • ISSN

    1095-7863

  • e-ISSN

  • Number of pages

    4

  • Pages from-to

    4184-4187

  • Publisher name

    Institute of Electrical and Electronic Engineers

  • Place of publication

    Piscataway

  • Event location

    Anaheim

  • Event date

    Oct 29, 2012

  • Type of event by nationality

    WRD - Celosvětová akce

  • UT code for WoS article