How can chips live under radiation?
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F68407700%3A21670%2F13%3A00222634" target="_blank" >RIV/68407700:21670/13:00222634 - isvavai.cz</a>
Result on the web
<a href="http://link.springer.com/chapter/10.1007/978-1-4614-4587-6_11" target="_blank" >http://link.springer.com/chapter/10.1007/978-1-4614-4587-6_11</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1007/978-1-4614-4587-6_11" target="_blank" >10.1007/978-1-4614-4587-6_11</a>
Alternative languages
Result language
angličtina
Original language name
How can chips live under radiation?
Original language description
Interactions of different types of radiation in silicon are discussed together with effects on devices. Long-term irradiations cause 'Total Ionization-Dose' degradation and 'Single Event Effects' occur when dense ionization upsets a small area in a chip.At the CERN Large Hadron Collider LHC we expect a severe radiation environment, yet sophisticated chips are needed. Some remedies against radiation effects are illustrated. One can use changes in technology, in device geometry, in circuit design or in layout. At system level one can recover loss of functions or data. Trends in CMOS technology call for continuous study of behaviour of new devices under radiation. The increased use of chips for critical functions everywhere imposes study of rare effectsof radiation, not only in extreme conditions. With large areas of silicon in operation worldwide, low probabilities do result in real incidents.
Czech name
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Czech description
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Classification
Type
D - Article in proceedings
CEP classification
JB - Sensors, detecting elements, measurement and regulation
OECD FORD branch
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Result continuities
Project
<a href="/en/project/LG13009" target="_blank" >LG13009: International experiment ATLAS-CERN</a><br>
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>I - Institucionalni podpora na dlouhodoby koncepcni rozvoj vyzkumne organizace
Others
Publication year
2013
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Article name in the collection
Nyquist AD Converters, Sensor Interfaces, and Robustness - Advances in Analog Circuit Design, 2012
ISBN
978-1-4614-4586-9
ISSN
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e-ISSN
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Number of pages
19
Pages from-to
203-221
Publisher name
Springer
Place of publication
New York
Event location
Valkenburg aan de Geul
Event date
Mar 27, 2012
Type of event by nationality
WRD - Celosvětová akce
UT code for WoS article
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