THE EFFECT OF THE EXALITE DOPANT ON PHOTOLUMINESCENCE OF POLY[METHYLPHENYLSILANE] IN THIN FILMS

Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28110%2F12%3A43869313" target="_blank" >RIV/70883521:28110/12:43869313 - isvavai.cz</a>
Alternative codes found
RIV/70883521:28610/12:43869313
Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
THE EFFECT OF THE EXALITE DOPANT ON PHOTOLUMINESCENCE OF POLY[METHYLPHENYLSILANE] IN THIN FILMS
Original language description
Polysilanes are known as representatives of ?-conjugated polymers which exhibit unique characteristic properties such as absorption and photoluminescence in UV region with a small Stoke?s shift, which is closely related to their electronic structure andexciton formation on the main silicon chain. This group of materials is considered for optoelectronic applications, for instance in nanolithography, in OLED devices or in photovoltaics as an active layer. In this work, we used poly(methylphenylsilane) asa p-type semiconductive material and Exalite 351 as an electron acceptor in the structure of host-dopant system for active layer in electronic devices in order to investigate the influence of dopant on photoluminescence of PMPSi. Polymer and polymer/dopant thin films were deposited on silicon substrate, with thickness in range of hundreds nanometers. The properties of thin films were characterized by UV/VIS absorption spectrometry and by fluorimetry.
Czech name
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Czech description
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Project
Result was created during the realization of more than one project. More information in the Projects tab.
Continuities
P - Projekt vyzkumu a vyvoje financovany z verejnych zdroju (s odkazem do CEP)<br>S - Specificky vyzkum na vysokych skolach

Publication year
2012
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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