Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved - Electrochemical Impedance Spectroscopy

Result code in IS VaVaI

<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2F70883521%3A28140%2F16%3A43875525" target="_blank" >RIV/70883521:28140/16:43875525 - isvavai.cz</a>

Result on the web

<a href="http://dx.doi.org/10.1016/j.polymdegradstab.2016.02.016" target="_blank" >http://dx.doi.org/10.1016/j.polymdegradstab.2016.02.016</a>

DOI - Digital Object Identifier

<a href="http://dx.doi.org/10.1016/j.polymdegradstab.2016.02.016" target="_blank" >10.1016/j.polymdegradstab.2016.02.016</a>

Result language

angličtina

Original language name

Electronic structure of UV degradation defects in polysilanes studied by Energy Resolved - Electrochemical Impedance Spectroscopy

Original language description

The white photo luminescence after UV degradation in long wavelength range 400-600 nm was examined on the prototypical polysilane, poly[methyl(phenyl)silane], using both photoluminescence spectroscopy and a new method of Energy Resolved - Electrochemical Impedance Spectroscopy (ER-EIS). Two groups of defect states, situated at approximately 440 nm (Delta E-1 = 2.8 eV with respect to electron transport energy) and 520 nm (Delta E-2 = 2.4 eV with respect to electron transport energy) were found by both spectroscopic methods. The white radiative recombination is ascribed to the recombination from trapping sites following the extreme energy migration. The forming of the crosslinking and bridging defects after photochemical scission of Si-Si via the series of various kinds of intermediates is feasible (-silyl R3Si -380 nm, silylene Si2H4 - 480 nm, silene and silylsilylene -550 nm emissions). On the grounds of the IR absorption spectroscopy results we suppose the presence of the bonding by methylene bridging and carbosilane unit Si-CH2-Si creation after Si-Si Si sigma sp3 bond scission. The ER-EIS method turned out to be extremely suitable for elucidation of the electronic structure and its changes in organic semiconductors due to its great resolving power and wide range both in the energy and the density of electronic states.

Czech name

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Czech description

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Type

J_x - Unclassified - Peer-reviewed scientific article (Jimp, Jsc and Jost)

CEP classification

BM - Solid-state physics and magnetism

OECD FORD branch

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Project

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Continuities

V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Publication year

2016

Confidentiality

S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Name of the periodical

Polymer Degradation and Stability

ISSN

0141-3910

e-ISSN

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Volume of the periodical

126

Issue of the periodical within the volume

Neuveden

Country of publishing house

GB - UNITED KINGDOM

Number of pages

4

Pages from-to

204-208

UT code for WoS article

000372764000024

EID of the result in the Scopus database

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