Anisotropic Magnetoresistive Effect - from the principle to the sensor

Result code in IS VaVaI
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Result on the web
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DOI - Digital Object Identifier
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Result language
angličtina
Original language name
Anisotropic Magnetoresistive Effect - from the principle to the sensor
Original language description
The anisotropic magnetoresistive sensors are an attractive alternative to the Hall effect-based sensors, in particular thanks to the comparable level of miniaturization, accompanied by higher sensitivity. These sensors exploit the anisotropic magnetoresistive effect in ferromagnetic metals. The resistance imposed to the flowing current is dependent on the angle of magnetization, the difference between the maximum and minimum resistance reaching units of percent. Sensors based on the anisotropic magnetoresistive effect almost exclusively rely on thin layers of appropriate ferromagnetic alloys. The used material, the way of the deposition and the geometry of the sensor, influencing the magnetoresistive effect itself as well as the range and sensitivity of the sensor, are the decisive parameters for the proper function of the sensor. The characteristic of the magnetoresistive element is linearized and the full-bridge configuration consisting of four elements is mostly used in the sensors.
Czech name
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Czech description
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Publication year
2015
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

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