All

What are you looking for?

All
Projects
Results
Organizations

Quick search

  • Projects supported by TA ČR
  • Excellent projects
  • Projects with the highest public support
  • Current projects

Smart search

  • That is how I find a specific +word
  • That is how I leave the -word out of the results
  • “That is how I can find the whole phrase”

Reflectance anisotropies of polycrystalline Ce1-xGdxO2-x/Si(001) interfaces

The result's identifiers

  • Result code in IS VaVaI

    <a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2FCZ______%3A_____%2F23%3AN0000049" target="_blank" >RIV/CZ______:_____/23:N0000049 - isvavai.cz</a>

  • Result on the web

    <a href="https://www.sciencedirect.com/science/article/pii/S016943322301841X?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S016943322301841X?via%3Dihub</a>

  • DOI - Digital Object Identifier

    <a href="http://dx.doi.org/10.1016/j.apsusc.2023.158161" target="_blank" >10.1016/j.apsusc.2023.158161</a>

Alternative languages

  • Result language

    angličtina

  • Original language name

    Reflectance anisotropies of polycrystalline Ce1-xGdxO2-x/Si(001) interfaces

  • Original language description

    Ce1-xGdxO2-x/2 thin films were deposited by spin coating on oxidized Si(001) substrates. Two strain regimes are observed by mu- Raman spectroscopy: for x < 0.1 the films are tensile strained, whereas a strain component of the wave number shift of -71.2x cm(-1) compensates with a 32.6x cm(-1) bond component for x > 0.1. Reflectance anisotropy spectroscopy (RAS) measurements were carried out on these films in which interface-related optical anisotropies signatures appearing in the 1.5 eV to 3.6 eV photon energy range are found dependent on the incorporation of Gd in the lattice. To explain the observed RAS signatures with a complex reflectance three-phase model, we resorted to spectroscopic ellipsometry (SE) to retrieve the interface optical anisotropies (IOA) related to the changes in refractive index, < Delta n >, between interface formed by both the oxidized Si(001) and polycrystalline CeO2:Gd films, and to assess the CeO2 energy gap variation from 3.2 to 2.8 eV in the 0 < x < 0.4 composition range. This study renders the combination of RAS, Raman, and SE versatile tools to optimize the growth parameters during the fabrication of devices based on polycrystalline CeO2 on a quantitative basis.

  • Czech name

  • Czech description

Classification

  • Type

    J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database

  • CEP classification

  • OECD FORD branch

    10302 - Condensed matter physics (including formerly solid state physics, supercond.)

Result continuities

  • Project

  • Continuities

    V - Vyzkumna aktivita podporovana z jinych verejnych zdroju

Others

  • Publication year

    2023

  • Confidentiality

    S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů

Data specific for result type

  • Name of the periodical

    Applied Surface Science

  • ISSN

    0169-4332

  • e-ISSN

    1873-5584

  • Volume of the periodical

    639

  • Issue of the periodical within the volume

    34

  • Country of publishing house

    NL - THE KINGDOM OF THE NETHERLANDS

  • Number of pages

    7

  • Pages from-to

    158161(1-7)

  • UT code for WoS article

    001092032600001

  • EID of the result in the Scopus database

    2-s2.0-85167818708