Reflectance anisotropies of polycrystalline Ce1-xGdxO2-x/Si(001) interfaces
The result's identifiers
Result code in IS VaVaI
<a href="https://www.isvavai.cz/riv?ss=detail&h=RIV%2FCZ______%3A_____%2F23%3AN0000049" target="_blank" >RIV/CZ______:_____/23:N0000049 - isvavai.cz</a>
Result on the web
<a href="https://www.sciencedirect.com/science/article/pii/S016943322301841X?via%3Dihub" target="_blank" >https://www.sciencedirect.com/science/article/pii/S016943322301841X?via%3Dihub</a>
DOI - Digital Object Identifier
<a href="http://dx.doi.org/10.1016/j.apsusc.2023.158161" target="_blank" >10.1016/j.apsusc.2023.158161</a>
Alternative languages
Result language
angličtina
Original language name
Reflectance anisotropies of polycrystalline Ce1-xGdxO2-x/Si(001) interfaces
Original language description
Ce1-xGdxO2-x/2 thin films were deposited by spin coating on oxidized Si(001) substrates. Two strain regimes are observed by mu- Raman spectroscopy: for x < 0.1 the films are tensile strained, whereas a strain component of the wave number shift of -71.2x cm(-1) compensates with a 32.6x cm(-1) bond component for x > 0.1. Reflectance anisotropy spectroscopy (RAS) measurements were carried out on these films in which interface-related optical anisotropies signatures appearing in the 1.5 eV to 3.6 eV photon energy range are found dependent on the incorporation of Gd in the lattice. To explain the observed RAS signatures with a complex reflectance three-phase model, we resorted to spectroscopic ellipsometry (SE) to retrieve the interface optical anisotropies (IOA) related to the changes in refractive index, < Delta n >, between interface formed by both the oxidized Si(001) and polycrystalline CeO2:Gd films, and to assess the CeO2 energy gap variation from 3.2 to 2.8 eV in the 0 < x < 0.4 composition range. This study renders the combination of RAS, Raman, and SE versatile tools to optimize the growth parameters during the fabrication of devices based on polycrystalline CeO2 on a quantitative basis.
Czech name
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Czech description
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Classification
Type
J<sub>imp</sub> - Article in a specialist periodical, which is included in the Web of Science database
CEP classification
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OECD FORD branch
10302 - Condensed matter physics (including formerly solid state physics, supercond.)
Result continuities
Project
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Continuities
V - Vyzkumna aktivita podporovana z jinych verejnych zdroju
Others
Publication year
2023
Confidentiality
S - Úplné a pravdivé údaje o projektu nepodléhají ochraně podle zvláštních právních předpisů
Data specific for result type
Name of the periodical
Applied Surface Science
ISSN
0169-4332
e-ISSN
1873-5584
Volume of the periodical
639
Issue of the periodical within the volume
34
Country of publishing house
NL - THE KINGDOM OF THE NETHERLANDS
Number of pages
7
Pages from-to
158161(1-7)
UT code for WoS article
001092032600001
EID of the result in the Scopus database
2-s2.0-85167818708