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General purpose driver for IGBT and MOSFET transistors
The description is focused on integrated solution of drivers for three phase inverter based either on IGBT or MOSFET transistors.
JA - Elektronika a optoelektronika, elektrotechnika
- 2016 •
- Gfunk •
- Link
Rok uplatnění
Gfunk - Funkční vzorek
Výsledek na webu
Ultra-wideband pulsed generator with avalanche transistor
Coaxial design. Pulse width is optional by length of pulse forming line. Peak output pulse voltage - 200 V. Output impedance - 50 Ohm. Generator is triggered by external pulse generator....
KA - Vojenství
- 2011 •
- Gfunk •
- Link
Rok uplatnění
Gfunk - Funkční vzorek
Výsledek na webu
Transistor Models Paramter Extraction
extraction generates models leaving physical meaning of their parameters. To generateboth with these methods and brings the example of extractor generating optimized physsically correct transistor models....
JA - Elektronika a optoelektronika, elektrotechnika
- 2002 •
- D
Rok uplatnění
D - Stať ve sborníku
Bipolar transistor structure electrical characterization
The bipolar transistor model parameters extraction method based on device simulator generated electrical characteristics is presented. The forward active region electrical characteristics generated by device simulator DESSI...
JA - Elektronika a optoelektronika, elektrotechnika
- 2005 •
- D
Rok uplatnění
D - Stať ve sborníku
Hyperchaotic self-oscillations of two-stage class C amplifier with generalized transistors
generalized bipolar transistors connected with common emitter. Both transistors and hyperchaos in a space of admittance parameters associated with both transistors structural stability of generated hyperc...
Electrical and electronic engineering
- 2021 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Measurement of Power Transistors Dynamic Parameters
This article deals with analysis of switching processes of power transistor as well as with description of performed measurement methods of these dynamic processes. The results are demonstrated on power IGBT transistor, nevertheless...
Electrical and electronic engineering
- 2018 •
- D •
- Link
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
Renewal of three-dimensional nanocrystalline diamond bio-transistor by low temperature hydrogenation
We employ directly grown microscopic (20um and 5um) solution-gated field-effect transistors (SGFET) as a biosensor with H-terminated surface acting as a gate insulator towards solution and generator of surface conductivity at the sa...
BM - Fyzika pevných látek a magnetismus
- 2012 •
- D
Rok uplatnění
D - Stať ve sborníku
Canonical hyperchaotic oscillators with single generalized transistor and generative two-terminal elements
generalized bipolar transistor as only active element. Three different networks are studied, depending on common-electrode configurations. In each case, transistor deterministic hyperchaotic oscillators with two coupled
Electrical and electronic engineering
- 2022 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
ZC-CDU Implementation Using Diamond Transistor
This paper describes an implementation of the extended current differencing unit ZC-CDU (Z-Copy Current Differencing Unit) using available integrated circuits. The implementation employs diamond transistors. The paper describes features of t...
KA - Vojenství
- 2012 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Electrical behaviour of MEH-PPV based diode and transistor
signal such as the field effect transistor (FET) as well as to generate light. Different colours of light could be generated by using different types of organicThe potential of organic semiconductor based devices for light...
BO - Biofyzika
- 2013 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
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