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Atomic scale analysis of the GaP/Si(100) heterointerface by in situ reflection anisotropy spectroscopy and ab initio density functional theory
Energetically and kinetically driven Si(100) step formations result in majority domains of monohydride-terminated Si dimers oriented either parallel or perpendicular to the step edges. Here, the intentional variation of the Si
BM - Fyzika pevných látek a magnetismus
- 2014 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Three-dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates
We have recently demonstrated for the example of Ge/Si(001) that crystal defects, wafer bowing can be avoided by combining deep substrate patterning, resulting in dense arrays of highly perfect three-dimensional epitaxial crystals. ...
BM - Fyzika pevných látek a magnetismus
- 2014 •
- D •
- Link
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
Stacking Fault Analysis of Epitaxial 3C-SiC on Si(001) Ridges
The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si(001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction....
BM - Fyzika pevných látek a magnetismus
- 2016 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Preparation and characterization of Ge epitaxially grown on nano-structured periodic Si pillars and bars on Si(001) substrate
pillars and bars with 360 nm periodicity on Si(001) substrate is studied to evaluate the applicability of nano-heteroepitaxy on the Ge-Si system for different fields of application situation in the Si nan...
BM - Fyzika pevných látek a magnetismus
- 2012 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
A combined in situ RAS, in vacuo XPS and ab initio DFT study of the GaP/Si(100) heterointerface
We study the preparation and atomi order of the buried GaP/Si(001) heterointerfaces in situ with RAS, XPS, and ab initio DFT. We demonstrate that preparation of almost single domain Si(001) substrate succe...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- O
Rok uplatnění
O - Ostatní výsledky
Band bending at heterovalent interfaces: hard X-ray photoelectron spectroscopy of GaP/Si(0 0 1) heterostructures
the atomic structure and electronic properties of GaP/Si(001) heterointerfaces utilizing of the GaP/Si(001) interfacial structure with Si-P bonds at the heterointerface barriers, and det...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2021 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Hard X-ray photoelectron spectroscopy study of core level shifts at buried GaP/Si(001) interfaces
We present a study of buried GaP/Si(001) heterointerfaces by hard X-ray photoelectron spectroscopy. Well-defined thin (4–50 nm) GaP films were grown on Si(001 offsets with the GaP film th...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2020 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
First-principles investigation on adsorption poisoning and heterogeneous nucleation mechanisms in Ca modified primary Mg2Si phase
, the heteroepitaxial nucleation mechanism nindicates the nucleation interface of Mg2Si(100)//CaSi2(001), where the Mg2Si(100) surface is terminated by Si, nand the CaSi2(001 poisoning and heteroepitaxial ...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2024 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Ab initio density functional theory study on the atomic and electronic structure of GaP/Si(001) heterointerfaces
The atomic and electronic band structures of GaP/Si(001) heterointerfaces were of abrupt interfaces and mixed interfaces with Si substitutional sites within a few GaP layers were derived. The electronic ba...
BM - Fyzika pevných látek a magnetismus
- 2016 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Transition from 2D to 3D growth during Ag/Si(111)-(7x7) heteroepitaxy
Transition from 2D to 3D growth during Ag/Si(111)-(7x7) heteroepitaxy...
BM - Fyzika pevných látek a magnetismus
- 2001 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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