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Activities towards p-type doping of ZnO
. However, its p-type doping represents a challenging problem, and the physical reasons of its mostlyn-type conductivity are not perfectly clear at present. Efforts to achieve p-type conductivity ...
BM - Fyzika pevných látek a magnetismus
- 2011 •
- Jx •
- Link
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Výsledek na webu
Colloidal boron diffusion source for the preparation of doped P-type silicon
The utility model relates to the composition of a colloidal diffusion source of boron for the preparation of doped P-type silicon......
Electrical and electronic engineering
- 2019 •
- Fuzit •
- Link
Rok uplatnění
Fuzit - Užitný vzor
Výsledek na webu
Experimental Studies on Doped and Co-Doped ZnO Thin Films Prepared by RF Diode Sputtering
n-type semiconductor, and it is quite easy to increase its conductivity by its doping using appropriate element. Somewhat difficult is ZnO doping to p-type conductivity. The paper deals with the research ...
BM - Fyzika pevných látek a magnetismus
- 2009 •
- C
Rok uplatnění
C - Kapitola v odborné knize
Properties of Li-, P- and N-doped ZnO thin films prepared by pulsed laser deposition
We have studied the crystalline, optical and electrical properties of ZnO thin films prepared by pulsed laser deposition and doped with one of the acceptor elements Li, N or P, respectively. The nitrogen doped sample grown ...
BH - Optika, masery a lasery
- 2005 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Profiling of N-Type Dopants in Silicon Based Structures
We have focused on variously doped n-type pattems on a lightly doped p-type SEM andPEEM microscooes should facilitate possible quantifying of the the doping levels in the n-type areas and...
JA - Elektronika a optoelektronika, elektrotechnika
- 2009 •
- D
Rok uplatnění
D - Stať ve sborníku
Acceptor Doping in Sputtered ZnO Thin Films
ZnO:N films with p-type carrier concentrations ranging 10 14-10 15 cm -3 and more. The carrier concentration of the p-type films was on the order of 10 17- 10 18 cm -3. 180Acceptor doping of zinc oxide th...
JJ - Ostatní materiály
- 2012 •
- D •
- Link
Rok uplatnění
D - Stať ve sborníku
Výsledek na webu
Preparation of hybrid heterostructures based on doped diamond and zinc oxide films
physical and chemical properties. P-type diamond can be produced relatively easily-type conductivity can be prepared, for example, doping elements Ga, Al, Sc and Mn type doping solution to the pr...
BM - Fyzika pevných látek a magnetismus
- 2014 •
- D
Rok uplatnění
D - Stať ve sborníku
Modulating p-type doping of two dimensional material palladium diselenide
. However, the regulation of p-type doping of PdSe2 remains unsolved problem prior to fabricating p-n junction as a fundamental platform of semiconductor physics. Besides, a quantitative method for the controllable...
Nano-technology
- 2023 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Profiling N-Type Dopants in Silicon
Variously doped n-type structures (dopant concentration between 1.5x10e16 cm-3 and 1.5x10e19 cm-3) on a lightly doped p-type silicon substrate (doped to 1.9x10e15 cm-3. High contrast have been obs...
JA - Elektronika a optoelektronika, elektrotechnika
- 2010 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Preparation of p-type InP layers for detection of radiation
responsible for n to p conductivity type conversion in layers doped with Ce. Tm seems to be a good candidate for preparation of p-type InP based detector structures of epitaxial layers exhibit n to p<...
JA - Elektronika a optoelektronika, elektrotechnika
- 2005 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
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