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Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells
Steady-state and time-resolved near-field optical spectroscopy of GaN/AlN quantum dots and InGaN/GaN quantum wells...
BM - Fyzika pevných látek a magnetismus
- 2002 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Growth and properties of GaN and AlN layers on silver substrates
We report on the preparation and properties of GaN and AlN layers grown polycrystalline character of GaN with high preferential GaN (11-22) orientation. An intermetallic phase of Ga3Ag is found at the GaN/...
BM - Fyzika pevných látek a magnetismus
- 2005 •
- Jx
Rok uplatnění
Jx - Nezařazeno - Článek v odborném periodiku (Jimp, Jsc a Jost)
Epitaxial multilayer structure for GaN-based high electron mobility transistors and a transistor containing this structure
semiconductors AlN and GaN. The binary semiconductors, and the interfaces between them, form by an AlN, or by an GaN layer. The barrier can contain one or multiple GaN/AlN pairs in nitride e-HEMT...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2019 •
- P •
- Link
Rok uplatnění
P - Patent
Výsledek na webu
Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer
by applying amorphous AlN thin layers as a dielectric in gate recessed AlGaN/GaN to 0.3 GPa in GaN after gate recessing was experimentally determined. The local of 4 and 6 nm thin AlN layers in the gate recessed s...
Inorganic and nuclear chemistry
- 2021 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Temperature effect on Al predose and AlN nucleation affecting the buffer layer performance for the GaN-on-Si based high-voltage devices
An AlN buffer layer allows epitaxial growth of GaN on silicon substrates. We have studied the early AlN nucleation stage performed at high and low process by a carbonization of the Si surface. Formation of the SiC interlaye...
Condensed matter physics (including formerly solid state physics, supercond.)
- 2019 •
- Jimp •
- Link
Rok uplatnění
Jimp - Článek v periodiku v databázi Web of Science
Výsledek na webu
Epitaxy film of AlN deposited in high-temperature MOCVD aparatus
SEM, XRD, XPS, analysis and Ellipsometry of epitaxy AlN film growth on saphire substrate by MOCVD method.
Condensed matter physics (including formerly solid state physics, supercond.)
- 2018 •
- Gfunk •
- Link
Rok uplatnění
Gfunk - Funkční vzorek
Výsledek na webu
Utility sample of final HEMT structure
ohm.cm (full substrate specification is W754B00). Our structure consists from AlN nucleation layer (1 nm of low temperature AlN @800°C, 260 nm of high temperature AlN doped AlN(5nm)/AlGaN(25 nm) superlattice with ...
JA - Elektronika a optoelektronika, elektrotechnika
- 2016 •
- Gfunk
Rok uplatnění
Gfunk - Funkční vzorek
Final Product Specification for Thick Polished Wafers W7584B00 for GaN/AlN Epitaxial Growth
Specification of the substrate for the growth of GaN / AlN layers and functional sample substrate (for ideal growth nucleation layer) of silicon wafer with 150 mm in diameter, the optimized: thickness due to the deflection of the wa...
JJ - Ostatní materiály
- 2015 •
- Gfunk
Rok uplatnění
Gfunk - Funkční vzorek
Temperature Dependence of the Pyroelectric Behaviour in GaN/AlGaN
So far the dependence of the spontaneous polarization coefficient for GaN and AlN on temperature has been measured to be minimal, which corresponds with expectation that the spontaneous polarization is reduced at the elevated temper...
JA - Elektronika a optoelektronika, elektrotechnika
- 2010 •
- D
Rok uplatnění
D - Stať ve sborníku
Proposal for nucleation
Technical report id TH02010014-2017V003, 29 pages, is focused on initialization of heteroepitaxial crystal growth of AlN on Si, including evaluation of layers optimization, alternative layers, influence of contamination by oxygen and relate...
Materials engineering
- 2017 •
- O
Rok uplatnění
O - Ostatní výsledky
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