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9 766 (0,084s) •

Result

Design and Characterisation of MBE Grown HEMT Structures

JA - Elektronika a optoelektronika, elektrotechnika

  • 2002
    • •
  • D
Result

Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction

BM - Fyzika pevných látek a magnetismus

  • 2011
    • •
  • Jx
    • •
  • Link
Result

Molecular beam epitaxy of LiMnAs

BM - Fyzika pevných látek a magnetismus

  • 2011
    • •
  • Jx
    • •
  • Link
Result

Room-temperature antiferromagnetism in CuMnAs

BM - Fyzika pevných látek a magnetismus

  • 2012
    • •
  • Jx
    • •
  • Link
Result

Investigation of the evolution of Bismuth layers deposited on silicon by MBE

Materials engineering

  • 2024
    • •
  • D
    • •
  • Link
Result

Investigation of the near-surface structures of polar InN films by chemical-state-discriminated hard X-ray photoelectron diffraction

BM - Fyzika pevných látek a magnetismus

  • 2013
    • •
  • Jx
    • •
  • Link
Result

Low-frequency noise measurements used for quality assessment of GaSb based laser diodes prepared by molecular beam epitaxy

Condensed matter physics (including formerly solid state physics, supercond.)

  • 2015
    • •
  • Jimp
    • •
  • Link
Result

Suppression of axial growth by boron incorporation in GaAs nanowires grown by self-catalyzed molecular beam epitaxy

Nano-materials (production and properties)

  • 2019
    • •
  • Jimp
    • •
  • Link
Result

Influence of Boron Antisite Defects on the Electrical Properties of MBE-Grown GaAs Nanowires

Nano-materials (production and properties)

  • 2019
    • •
  • Jimp
    • •
  • Link
Result

Etching enhanced annealing of GaMnAs layers

BM - Fyzika pevných látek a magnetismus

  • 2009
    • •
  • Jx
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